A 186 to 212 GHz Downconverter in 90 nm CMOS
نویسندگان
چکیده
منابع مشابه
A 186 to 212 GHz Downconverter in 90 nm CMOS
The design and measurements of a 200 GHz downconverter in 90 nm standard CMOS are presented. A positive conversion gain of +6.6 dB, a noise figure of 29.9 dB and an output bandwidth of 3 GHz are measured for an LO power of −14.9 dBm. The conversion gain remains within 3 dB for an RF frequency between 186 and 212 GHz. Downconversion of BPSK and QPSK signals is demonstrated with eye diagrams and ...
متن کاملSynthesis in 90-nm CMOS
We propose and demonstrate a 20-ps time-to-digital converter (TDC) realized in 90-nm digital CMOS. It is used as a phase/frequency detector and charge pump replacement in an all-digital phase-locked loop for a fully-compliant Global System for Mobile Communications (GSM) transceiver. The TDC core is based on a pseudodifferential digital architecture that makes it insensitive to nMOS and pMOS tr...
متن کاملA 56–65 GHz Injection-Locked Frequency Tripler With Quadrature Outputs in 90-nm CMOS
A sub-harmonic injection-locked tripler multiplies a 20-GHz differential input to 60-GHz quadrature (I/Q) output signals. The tripler consists of a two-stage ring oscillator driven by a single-stage polyphase input filter and 50I and Q-signal output buffers. Each gain stage incorporates a hard limiter to triple the input frequency for injection locking and a negative resistance cell with two po...
متن کاملA 90-nm CMOS 144 GHz Injection Locked Frequency Divider with Inductive Feedback
This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 – 145.14 GHz) at input power of -3 dBm. To the authors’ best knowledge, this is the highest ...
متن کامل48 GHz Power Amplifier for mm-wave LO Distribution Circuitry in 90 nm CMOS
—A 48 GHz fully integrated two stages power amplifier (PA) for mm-wave application is presented in this paper. The PA is implemented in 90 nm LP CMOS technology with Cascode topology to enhance gain and stability. The single ended PA achieves around 15 dB small signal gain, 4.5 dBm saturated output power and a peak power added efficiency of 9% in measurement. Patterned ground shield coplanar tr...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Infrared, Millimeter, and Terahertz Waves
سال: 2012
ISSN: 1866-6892,1866-6906
DOI: 10.1007/s10762-012-9930-x